AP15N06 NMOS SOT89-3L 电池保护MOS管 n沟道增强型mos场效应管

Super Low Gate Charge

Green Device Available

Excellent Cdv/dt effect decline

Advanced high cell density Trench

technology

Description

The 15N06is the highestperformance trench N-

ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the synchronous buck converter

applications .

The meet the RoHS and Green Product

requirement, 100% EAS guaranteed with full

function reliability approved.

AP15N06 NMOS SOT89-3L 电池保护MOS管 n沟道增强型mos场效应管_第1张图片

AP15N06 NMOS SOT89-3L 电池保护MOS管 n沟道增强型mos场效应管_第2张图片

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