samsung NAND Flash 命名规则

Part number description:	K 9 X XX X X X X X - X X X X X XX

 

 

K	Device Type	K = Memory
9	Family Descriptor	9 = NAND Flash
X	Small Classification	1 = SLC 1 Chip XD Card 2 = SLC 2 Chip XD Card 3 = 4bit MLC Mono 4 = SLC 4 Chip XD Card 5 = MLC 1 chip XD card 6 = MLC 2 chip XD card 7 = SLC moviNAND 8 = MLC moviNAND 9 = 4bit MLC ODP A = 3bit MLC MONO B = 3bit MLC DDP C = 3bit MLC QDP E = SLC Dual (S/B) F = SLC Normal G = MLC Normal H = MLC QDP J = Non-muxed One Nand K = SLC Die Normal, SLC Die stack L = MLC DDP M = MLC DSP N = SLC DSP O = 3bit MLC ODP P = MLC ODP Q = SLC ODP R = MLC 12-die stack S = MLC 6-die stack T = SLC Single (S/B) U = MLC 16-die stack W = SLC 4 Die Stack Note: SLC = Single Level Cell MLC = Multi Level Cell SM = SmartMedia S/B = Small Block
XX	Density	00 = None 40 = 4Mbit 80 = 8Mbit 16 = 16Mbit 32 = 32Mbit 64 = 64Mbit 28 = 128Mbit 56 = 256Mbit 12 = 512Mbit 1G = 1Gbit 2G = 2Gbit 4G = 4Gbit 8G = 8Gbit AG = 16Gbit LG = 24Gbit BG = 32Gbit ZG = 48Gbit CG = 64Gbit NG = 96Gbit DG = 128Gbit EG, FG = 256Gbit GG = 384Gbit HG = 512Gbit
X	Technology	0Normal (x8) 1 = Normal (x16) C = Catridge SIP D = DDR M = moviNAND N = moviNAND FAB P = moviMCP T = Premium eSSD Z = SSD
X	Organization	0None 6 = x16 8 = x8
X	Supply Voltage	0None A = 1.65V to 3.6V B = 2.5V to 2.9V C = 4.5V to 5.5V D = 2.4V to 2.9V E = 2.3V to 3.6V R = 1.65V to 1.95V Q = 1.7V to 1.95V S = 3,0V to 3,6V / Vccq 1,65V to 1,95V T = 2.4V to 3.0V U = 2.7V to 3.6V V = 3.0V to 3.6V W = 2.7V to 5.5V, 3.0V to 5.5V
X	Mode	0Normal 1 = Dual nCE & Dual R/nB 3 = Tri nCE & Tri R/nB 4 = Quad nCE & Single R/nB 5 = Quad nCE & Quad R/nB 6 = 6 nCE & 2 RnB 7 = 8 nCE & 4 RnB 8 = 8 nCE & 2RnB 9 = 1st block OTP A = Mask Option 1 L = Low grade
X	Generation	M = 1st generation A = 2nd generation B = 3rd generation C = 4th generation D = 5th generation E = 6th generation ... Y = 25th generation Z = 26th generation
X	Package Type	8 = TSOP1 (Leed-free, halogen-free, CU) 9 = 56TSOP1 (Lead-free, halogen-free, CU) A = COB B = FBGA (Lead-free, halogen-free) D = 63-TBGA E = ISM (Lead-free, halogen-free) F = WSOP (Lead-free) G = FBGA H = BGA (Lead-free, halogen-free) I = ULGA (Lead-free) (12*17) J = FBGA (Lead-free) K = ULGA (Lead-free, halogen-free) (12*17) L = ULGA (Lead-free, halogen-free) (14*18) M = 52-ULGA (Lead-free, halogen-free) (13*18) P = TSOP1 (Lead-free) Q = TSOP2 (Lead-free) R = 56-TSOP1 (Lead-free, halogen-free) S = TSOP1 (Lead-free, halogen-free) T = WSOP (Lead-free, halogen-free) U = COB (MMC) V = WSOP W = Wafer Y = TSOP1 Z = WELP (Lead-free)
X	Temperature Range	C = Commercial I = Industrial S = SmartMedia B = SmartMedia BLUE 0None
X	Customer Bad Block	B = Include bad block D = Daisychain sample K = Special handling L = 1 to 5 bad block N = Ini. all good, add. 10 blocks S = All good block 0None (containing wafer, chip, BIZ, exception handling code)
X	Pre-Program Version	0None Serial (1~9, A~Z)
X	Packing	T = Tape&Reel 0Other (Tray, Tube, Jar) S = Stack
XX	Customer („customer list reference“)