STM32F7xx —— 内部flash
STM32F7xx —— 内部flash
这个就没什么好说的了，直接上代码了，主要封装了三个函数，擦除，写flash，读flash。
// STM32F767IGT6: 1M flash
// STM32F767ZIT6: 2M flash
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 32 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08008000) /* Base @ of Sector 1, 32 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08010000) /* Base @ of Sector 2, 32 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x08018000) /* Base @ of Sector 3, 32 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08020000) /* Base @ of Sector 4, 128 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08040000) /* Base @ of Sector 5, 256 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08080000) /* Base @ of Sector 6, 256 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x080C0000) /* Base @ of Sector 7, 256 Kbytes */
#ifdef STM32F767ZIT6
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08100000) /* Base @ of Sector 8, 256 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x08140000) /* Base @ of Sector 9, 256 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x08180000) /* Base @ of Sector 10, 256 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x081C0000) /* Base @ of Sector 11, 256 Kbytes */
#endif// 获取要擦除扇区编号
static uint32_t flash_sector_number(uint32_t address)
{
uint32_t sector = 0;
if((address < ADDR_FLASH_SECTOR_1) && (address >= ADDR_FLASH_SECTOR_0))
{
sector = FLASH_SECTOR_0;
}
else if((address < ADDR_FLASH_SECTOR_2) && (address >= ADDR_FLASH_SECTOR_1))
{
sector = FLASH_SECTOR_1;
}
else if((address < ADDR_FLASH_SECTOR_3) && (address >= ADDR_FLASH_SECTOR_2))
{
sector = FLASH_SECTOR_2;
}
else if((address < ADDR_FLASH_SECTOR_4) && (address >= ADDR_FLASH_SECTOR_3))
{
sector = FLASH_SECTOR_3;
}
else if((address < ADDR_FLASH_SECTOR_5) && (address >= ADDR_FLASH_SECTOR_4))
{
sector = FLASH_SECTOR_4;
}
else if((address < ADDR_FLASH_SECTOR_6) && (address >= ADDR_FLASH_SECTOR_5))
{
sector = FLASH_SECTOR_5;
}
else if((address < ADDR_FLASH_SECTOR_7) && (address >= ADDR_FLASH_SECTOR_6))
{
sector = FLASH_SECTOR_6;
}
#ifdef STM32F767ZIT6
else if((address < ADDR_FLASH_SECTOR_8) && (address >= ADDR_FLASH_SECTOR_7))
{
sector = FLASH_SECTOR_7;
}
else if((address < ADDR_FLASH_SECTOR_9) && (address >= ADDR_FLASH_SECTOR_8))
{
sector = FLASH_SECTOR_8;
}
else if((address < ADDR_FLASH_SECTOR_10) && (address >= ADDR_FLASH_SECTOR_9))
{
sector = FLASH_SECTOR_9;
}
else if((address < ADDR_FLASH_SECTOR_11) && (address >= ADDR_FLASH_SECTOR_10))
{
sector = FLASH_SECTOR_10;
}
else if((address < 0x081C0000) && (address >= ADDR_FLASH_SECTOR_11))
{
sector = FLASH_SECTOR_11;
}
#else
else if(address >= ADDR_FLASH_SECTOR_7)
{
sector = FLASH_SECTOR_6;
}
#endif
return sector;
}
// 擦除指定扇区数据 仔细的朋友会发现count没有用到，这里可以任意更改，我是为了兼容F1的命名。
void SocFlashErase(uint32_t addr, uint8_t count)
{
FLASH_EraseInitTypeDef flash_erase;
uint32_t flash_error;
HAL_FLASH_Unlock();
flash_erase.TypeErase = FLASH_TYPEERASE_SECTORS; // 擦除类型，扇区擦除
flash_erase.Sector = flash_sector_number(addr); // 要擦除的扇区
flash_erase.NbSectors = 1; // 一次只擦除一个扇区 这里可以使用参数的count 为了防止错误操作这里写成1
flash_erase.VoltageRange = FLASH_VOLTAGE_RANGE_3; // 电压范围，VCC=2.7~3.6V之间!!
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);
HAL_FLASHEx_Erase(&flash_erase, &flash_error);
FLASH_WaitForLastOperation(50000);
HAL_FLASH_Lock();
}
uint8_t SocFlashWrite(uint32_t addr, uint8_t *buffer, uint32_t length)
{
uint32_t i;
uint16_t data = 0;
if (length == 0)
{
return 0;
}
HAL_FLASH_Unlock();
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);
// 按半字编程
for (i = 0; i < length; i += 2)
{
data = (*(buffer + i + 1) << 8) + (*(buffer + i));
HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, (uint32_t)(addr + i), data);
}
HAL_FLASH_Lock();
return 0;
}
uint32_t SocFlashRead(uint32_t addr, uint8_t *buffer, uint32_t length)
{
memcpy(buffer, (void *)addr, length);
return length;
}
F1内部flash