stm32l476 内部flash HAL库操作方法

stm32l476 FLASH特征

• Up to 1 Mbyte of Flash memory with dual bank architecture supporting read-while-write
capability (RWW).
• Memory organization: 2 banks (Bank 1 and Bank 2)
– main memory: 512 Kbyte per bank
– information block: 32 Kbyte per bank
• 72-bit wide data read (64 bits plus 8 ECC bits)
• 72-bit wide data write (64 bits plus 8 ECC bits)
• Page erase (2 Kbyte), bank erase and mass erase (both banks)
摘自 STM32 RM0351 Reference manual 文档

• stm32l476 dual bank 地址表
  

写入操作流程

1. FLASH解锁
   
HAL_FLASH_Unlock();

2. 擦除FLASH
   
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *PageError);

3. 写入FLASH
   
HAL_FLASH_Program(uint32_t TypeProgram, uint32_t Address, uint64_t Data);

4. 锁定FLASH
   
HAL_FLASH_Lock();


读取操作

直接从目标地址读取, uint8_t* 按照1个字节读取，如果是uint32_t* 按照一个字读取

buff[i] = *(__IO uint8_t*)(dest_addr + i);
//直接从目标地址读取, uint8_t* 按照1个字节读取，如果是uint32_t* 按照一个字读取

具体实现

/**
  * @brief  Initializes Memory.
  * @param  None
  * @retval 0 if operation is successeful, MAL_FAIL else.
  */
flash_status_t Flash_If_Init(void)
{
  /* Unlock the internal flash */
  HAL_FLASH_Unlock();
  return FLASH_OK;
}

/**
  * @brief  De-Initializes Memory.
  * @param  None
  * @retval 0 if operation is successeful, MAL_FAIL else.
  */
flash_status_t Flash_If_DeInit(void)
{
  /* Lock the internal flash */
  HAL_FLASH_Lock();
  return FLASH_OK;
}

/**
  * @brief  Erases sector.
  * @param  Add: Address of sector to be erased.
  * @retval 0 if operation is successeful, MAL_FAIL else.
  */
flash_status_t Flash_If_Erase(uint32_t Add)
{
  uint32_t PageError = 0;
  /* Variable contains Flash operation status */
  HAL_StatusTypeDef status;
  FLASH_EraseInitTypeDef eraseinitstruct;

  /* Clear OPTVERR bit set on virgin samples */
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

   /* Get the number of sector to erase from 1st sector*/
  eraseinitstruct.Banks = GetBank(Add);
  eraseinitstruct.TypeErase = FLASH_TYPEERASE_PAGES;
  eraseinitstruct.Page = GetPage(Add);
  eraseinitstruct.NbPages = 1;
  status = HAL_FLASHEx_Erase(&eraseinitstruct, &PageError);

  if (status != HAL_OK)
  {
    return FLASH_ERR;
  }
  return FLASH_OK;
}

/**
  * @brief  Writes Data into Memory.
  * @param  src: Pointer to the source buffer. Address to be written to.
  * @param  dest: Pointer to the destination buffer.
  * @param  Len: Number of data to be written (in bytes).
  * @retval 0 if operation is successeful, MAL_FAIL else.
  */
flash_status_t Flash_If_Write(uint8_t *src, uint32_t dest_addr, uint32_t Len)
{
  uint32_t i = 0;

  /* Clear OPTVERR bit set on virgin samples */
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

  for(i = 0; i < Len; i += 8)
  {
    /* Device voltage range supposed to be [2.7V to 3.6V], the operation will
       be done by byte */
    if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, (uint32_t)(dest_addr+i), *(uint64_t*)(src+i)) == HAL_OK)
    {
     /* Check the written value */
      if(*(uint64_t *)(src + i) != *(uint64_t*)(dest_addr+i))
      {
        /* Flash content doesn't match SRAM content */

        return FLASH_CHECK_ERR;
      }

    }
    else
    {
      /* Error occurred while writing data in Flash memory */
      return FLASH_ERR;
    }
  }
  return FLASH_OK;
}

/**
  * @brief  Reads Data into Memory.
  * @param  src: Pointer to the source buffer. Address to be written to.
  * @param  dest: Pointer to the destination buffer.
  * @param  Len: Number of data to be read (in bytes).
  * @retval return FLASH_OK.
  */
flash_status_t Flash_If_Read(uint8_t* buff, uint32_t dest_addr, uint32_t Len)
{

    uint32_t i;
    for(i = 0; i < Len; i++){
            buff[i] = *(__IO uint8_t*)(dest_addr + i);
    }
  /* Return a valid address to avoid HardFault */
  return FLASH_OK;
}

/**
  * @brief  Gets the page of a given address
  * @param  Addr: Address of the FLASH Memory
  * @retval The page of a given address
  */
static uint32_t GetPage(uint32_t Addr)
{
  uint32_t page = 0;

  if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
  {
    /* Bank 1 */
    page = (Addr - FLASH_BASE) / FLASH_PAGE_SIZE;
  }
  else
  {
    /* Bank 2 */
    page = (Addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;
  }

  return page;
}

/**
  * @brief  Gets the bank of a given address
  * @param  Addr: Address of the FLASH Memory
  * @retval The bank of a given address
  */
static uint32_t GetBank(uint32_t Addr)
{
  uint32_t bank = 0;

  if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0)
  {
    /* No Bank swap */
    if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
    {
      bank = FLASH_BANK_1;
    }
    else
    {
      bank = FLASH_BANK_2;
    }
  }
  else
  {
    /* Bank swap */
    if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
    {
      bank = FLASH_BANK_2;
    }
    else
    {
      bank = FLASH_BANK_1;
    }
  }

  return bank;
}