【电力电子】【2018.11】用于IST方程式的紧凑型三相SiC逆变器（学生原型）

本文为葡萄牙里斯本技术大学（作者：Pedro Miguel Batista de Sousa Correia da Costa）的硕士论文，共118页。

本论文的主要目标是利用市场上现有的最新半导体技术，开发三相逆变器、驱动电路和仪器的原型，并将其应用于IST方程式学生队的竞赛电动车中。此外，还提出了一套理论依据和实验步骤，以估算逆变器工作时的半导体损耗。本文对功率变换器采用宽带隙半导体的发展现状作了初步分析。两种有希望的器件：碳化硅MOSFET和氮化镓HEMT，是从两个领先的生产这些器件的制造商中挑选出来的，并且每一种都进行了一些实验测试。根据实验结果，选择MOSFET和碳化硅肖特基二极管作为最适合用于运动赛车逆变器的技术。所选器件的开关和传导损耗在逆变器配置中进行了表征。将所得实验结果与使用制造商提供的SPICE模型模拟得到的数值进行了比较。此外，实验数据被用来建立新的模型，允许在动态条件下确定损耗，从而满足方程式学生原型的实际需要。在论文的执行过程中，使用感应负载和三相电动机对逆变器原型的运行进行了测试，在功率密度和效率方面都表现出显著的结果。

This thesis has as primary objective thedevelopment of a prototype for a three-phase inverter, driving circuits andinstrumentation, using new semiconductor technologies available in the market,to be implemented in a competition electric vehicle of the IST Formula Studentteam. Furthermore, a theoretical basis and a set of experimental procedures wasproposed in order to estimate the semiconductor losses in inverter operation.In a preliminary analysis the state of the art on the development of wide bandgapsemiconductors for use in power converters is depicted. Two promising devices,Silicon Carbide MOSFET and Gallium Nitride HEMT, were chosen from two leadingmanufacturers in the production of these devices, and for each severalexperimental tests were performed. At the light of the test results the MOSFETsand Silicon Carbide Schottky Diodes were selected as the most suited technologyto be used in inverters for motorization of racing vehicles. The switching andconduction losses for both chosen devices were characterized in an invertercon- figuration. The obtained experimental results were compared with valuesobtained by simulations using SPICE models available by the manufacturers. Inaddition, the experimental data was used to formulate new models that allow thedetermination of losses in dynamic conditions, thus meeting the real needs ofthe Formula Student prototype. During the execution of the thesis the operationof the inverter prototype was tested using an inductive load and a three-phasemotor, showing prominent results both in power density as in efficiency.

1. 引言
2. 理论背景与损耗分析
3. 半导体损耗的实验测定
4. 三相逆变器设计与制造
5. 三相逆变器测试
6. 结论
   附录A Altium图纸
   附录B PCB图纸
   附录C 技术手册

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