toggle DRR(DDR+NAND)

转自SAMSUNG

Introduction
ToggleDDR is a NAND interface for high performance applications which supports data read and write operations using bidirectional DQS.
What is Toggle DDR NAND?
Samsung's ToggleDDR NAND has implemented a Double Data Rate without clocks. It is backward compatible with Conventional NAND (SDR NAND) in terms of functions and command while providing fast data transmission based on the high-speed DDR Interface and consuming less power when reduced I/O voltage is adopted. For applications which require high performance, Samsung's ToggleDDR NAND will be a perfect solution.

ToggleDDR NAND supports the interface speed of up to 133 Mbps, which is more than 3 times faster than the data transfer rate offered by the existing SDR NAND (40 Mbps). And Toggle DDR NAND supports both 1.8V and 3.3V for IO voltage while SDR NAND supports only 3.3V for IO voltage. The reduced IO voltage is expected to help low power consumption. Although data transfer is always synchronized with the DQS signal which performs a clock role at high speed, it is power efficient as DQS is enabled only when data is transferred.
Benefits
High performance - DDR interface up to 133Mbps (Toggle DDR 1.0)
: Toggle DDR 2.0 will support up to 400Mbps
Low power - 1.8V VCCQ without a free running clock
: Toggle DDR NAND saves more power when 1.8V IO voltage is adopted than existing SDR NAND which supports only 3.3V IO voltage
: Toggle DDR NAND is power efficient as it does not need the free-running clock

JEDEC standard
: Toggle DDR is a standard interface of the NAND Flash component itself and is defined through a joint task group in the JEDEC. Participation in the joint task group is open to all JEDEC members.
Various High-Performance Application Support
: As high speed interfaces such as SATA2/3, USB3.0, UFS and UHS-1/2 are introduced, the high speed NAND composing the application is widely required.
Toggle DDR Trend
Currently, various applications continue to require high-performance, low-power NAND. 133 Mps Toggle DDR is to be launched in 2010, and 400 Mbps Toggle DDR is considered to be launched in 2011.

存在的问题：
MT29C1G24M这个芯片,正确的称呼应该是MCP器件,其中包含一块LPDDR和一块NANDFlash.这个器件在网上是找不到datasheet的,需要同厂家签协议才能获得(同时也订不到货,也必须联系厂家).如果只用LPDDR或NANDFlash,客户可以用标准的LPDDR和NANDFlash替代.使用MCP的主要优势是板子可以画的小一点.从厂家角度,用MCP可以一次卖给客户两颗器件.我们选择这颗器件是TI的要求,没有什么必须的道理.这颗器件的主要指标是128MB(yte)RAM和128MB(yte)NAND Flash.同理,SAMSUNG和Hynix的MCP器件也是如此,一样需要厂家直接联系.最后,请注意各个厂家的MCP器件是管脚不兼容的