matlab imwareaopen,李祎 副教授

职称：副教授、博士生导师

院系：华中科技大学 光学与电子信息学院微电子学系 /武汉光电国家研究中心 (双聘)

研究所：信息存储材料及器件研究所(缪向水教授团队)，先进存储器湖北省重点实验室，蔡少棠忆阻器研究中心(Chua Memristor Institute)

Email: [email protected]；[email protected]

办公室地点：新光电信息大楼(学校东大门旁)D735

学生培养及工作理念：Diligence (勤勉)、Collaboration(合作)、Innovation(创新)

招收研究生：每年拟招收博士1名、科学学位硕士1~2名、专业学位硕士1~2名。热烈欢迎具有微电子、材料、物理相关背景的积极、乐观、进取的学生报考。

欢迎在以下任一专业方向具有良好基础的学生：半导体物理与器件、微电子器件工艺与表征、数字/模拟电路、神经网络、机器学习、线性代数等。

欢迎能熟练使用Matlab，Python，Spice，单片机，FPGA等软硬件的学生。

热烈欢迎学有余力的优秀本科生加入团队参与科研创新。

学习工作经历：

2005年至2009年 华中科技大学电子科学与技术专业 本科生；

2009年至2010年 华中科技大学微电子学与固体电子学专业 硕士研究生；

2010年至2014年３月 华中科技大学微电子学与固体电子学专业 博士研究生；

2014年４月至2015年２月华中科技大学光学与电子信息学院 研究助理；

2016年6月至2016年8月台湾中山大学物理学系 访问学者；

2015年３月至2018年10月 华中科技大学光学与电子信息学院 讲师；

2018年11月至今 华中科技大学光学与电子信息学院 副教授。

学科专业/研究方向：

1.微电子学与固体电子学专业/微电子材料与器件方向；

2.电子信息材料与元器件专业/信息存储材料与器件方向；

主讲课程：

1.《化合物半导体器件》

2.《微纳器件分析技术》

研究概况：

面向后摩尔时代需求，研发忆阻器(Memristor)、阻变存储器(Resistive Random Access Memory, RRAM)等新兴半导体器件，研究其物理工作机制和性能调控方法，开发其非易失性信息存储(Nonvolatile Memory)、类脑神经形态计算(Brain-Inspired Neuromorphic Computing)、存算一体化(In-memory computing)、机器学习加速引擎(Accelerator)等新兴功能及应用，发展存储与计算融合的非冯·诺依曼计算原理和架构。

在Advaned Functional Materials、Advanced Electronic Materials、Advanced Intelligent Systems、Nanoscale、ACS Applied Materials & Interfaces、IEEE EDL、IEEE TED、IEEE TCASII、Applied Physics Letters、Journal of Applied Physics、Journal of Physics D、Science China: Information Science(中国科学：信息科学英文版)、Journal of Semiconductor(半导体学报英文版)等期刊发表论文60余篇；申请发明专利70余项，已授权美国专利5项、中国发明专利30余项。获2015年度湖北省优秀博士学位论文。

科研项目情况：

主持国家自然科学基金重大研究计划培育项目、面上项目、青年项目、中国科学院开放课题各1项，参与承担国家重点研发计划青年科学家项目、国家自然科学基金重点/应急/面上项目等项目。

现阶段在研的重要项目：

1. 基于易失性忆阻器的脉冲神经元及硬件脉冲神经网络的实现探索，国家自然科学基金重大研究计划培育项目，2021-2023，主持。

2. 基于双极性自选通忆阻器的非易失可重构逻辑原理与实现研究，国家自然科学基金面上项目，2019-2022，主持。

3.碲化物忆阻突触器件机制及联想学习功能研究，国家自然科学基金青年科学基金项目，2016-2018，主持。

4.突破存储墙限制的存储-计算一体化忆阻器件研究，国家自然科学基金信息学部应急管理项目，2019-2021，参与。

5.氧化物忆阻材料与人工神经突触器件，国家自然科学基金重点项目，2018-2022，参与。

6. 基于忆阻器的非易失性状态逻辑运算方法与实现研究，国家自然科学基金面上项目，2017-2020，参与。

7.面向三维集成的阻变存储器纳米尺度效应研究，国家重点研发计划纳米科技专项青年项目，2016-2021，参与。

学生获奖励情况：

教育部国家奖学金(博士生：许磊(2013、2015)，周亚雄(2016)，王卓睿(2018))

2019年 ICMIC Best Student Poster (程龙)

2019年 “Lam Research-华中科技大学微电子论文奖”(二等奖：陈佳；三等奖：程龙)

2018年 “Lam Research-华中科技大学微电子论文奖”(二等奖2项：靳苗苗，王卓睿)

2018年 IWOFC Best Poster Award(陈佳、潘文谦)

2018年 ICTA Best paper nomination (段念)

2017年首届全国大学生类脑计算创新应用大赛暨国际邀请赛总决赛“优秀团队奖”(陈佳、秦超、匡睿)

著作与章节：

3.Ling Yang, Yi Li*, Long Cheng, Xiangshui Miao*, Nonvolatile memristive logic: a road to in-memory computing, InMem-elements for Neuromorphic Circuits with Artificial Intelligence Applications, Volos Ch.K. Sr. and Viet-Thanh Pham, Ed. Elsevier, 2021. DOI: 10.1016/B978-0-12-821184-7.00025-6.

2. Zhe Yang, Yi Li*, Xiang-Shui Miao*, Chalcogenide materials for optoelectronic memory and neuromorphic computing. InPhoto-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing, S.-T. Han and Y. Zhou, Ed. Elsevier, 2020; pp 293-315. (Paperback ISBN: 9780128197172, Imprint: Woodhead Publishing, Published Date: 1st June 2020.

1.缪向水，李祎，孙华军，薛堪豪，《忆阻器导论》，科学出版社，2018.03。ISBN: 978-7-03-056687-4.

期刊论文(按年份倒序)：

61. Tian-Qing Wan, Yi-Fan Lu, Jun-Hui Yuan, Hao-Yang Li, Yi Li,* Xiao-Di Huang, Kan-Hao Xue,* and Xiang-Shui Miao, 12.7 MA/cm2 on-current density and high uniformity realized in AgGeSe/Al2O3 selectors, IEEE Electron Device Letters, 2021. DOI: 10.1109/LED.2021.3061620.

60.Ling Yang,† Long Cheng,† Haoyang Li, Jiancong Li,Yi Li,* Ting-Chang Chang, Xiangshui Miao,* Cryptographic Key Generation and in situ Encryption in One-Transistor-One-Resistor Memristors for Hardware Security, Advanced Electronic Materials, 2021. DOI: 10.1002/aelm.202001182.

59. Jia Chen, Jiancong Li,Yi Li*, Xiangshui Miao*, Multiply Accumulate (MAC) operations in memristor crossbar array for analog computing,Journal of Semiconductors, 42(1), 013104, 2021.

58. Chih-Yang Lin†, Jia Chen†, Po-Hsun Chen, Ting-Chang Chang*, Yuting Wu, Jason K. Eshraghian, John Moon, Sangmin Yoo, Yu-Hsun Wang, Wen-Chung Chen, Zhi-Yang Wang, Hui-Chun Huang, Yi Li , Xiangshui Miao, Wei D. Lu, and Simon M. Sze, Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM devices, Small, 16(42), 2003964, 2020. DOI: 10.1002/smll.202003964.

57. Yaoyao Fu,† Boyi Dong,† Wan-Ching Su, Zhi-Yang Lin, Kuan-Ju Zhou, Ting-Chang Chang, Fuwei Zhuge,Yi Li, Yuhui He,* Bin Gao, Xiangshui Miao,* Enhancing LiAlOx synaptic performance by reducing Schottky barrier height for deep neural network application, Nanoscale, 12, 22970-22977, 2020. DOI: 10.1039/D0NR04782A.

56.Ming Xu,†* Xianliang Mai,† Jun Lin,† Wei Zhang,Yi Li, Yuhui He, Hao Tong, Peng Zhou,* and Xiangshui Miao,* Recent advances on neuromorphic devices based on chalcogenide phase-change materials,Advanced Functional Materials, 2003419, 2020.

55.Yi-Fan Qin, Han Bao, Feng Wang, Jia Chen, Yi Li*, and Xiang-Shui Miao*,Recent progress on memristive convolutional neural networks for edge intelligence, Advanced Intelligent Systems, 2(11), 2000114, 2020. DOI: 10.1002/aisy.202000114.

54.Long Cheng,† Jiancong Li,† Hao-Xuan Zheng, Peng Yuan, Jiahao Yin, Ling Yang, Qing Luo,Yi Li*, Hangbing Lv, Ting-Chang Chang, Xiangshui Miao*, In-memory Hamming Weight Calculation in a 1T1R memristive array,Advanced Electronic Materials, 6(9), 2000457, 2020. DOI:10.1002/aelm.202000457.

53.Yi-Fan Lu, Yi Li*, Hao-Yang Li, Tian-Qing Wan, Yu-Hui He and Xiang-Shui Miao, A Low-Power Artificial Neuron Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing, IEEE Electron Device Letters, 41(8), 1245-1248, 2020. DOI: 10.1109/LED.2020.3006581.

52. Hao-Yang Li,† Xiao-Di Huang,† Jun-Hui Yuan,† Yi-Fan Lu, Yi Li*, Kan-Hao Xue*, Yu-Hui He, Ming Xu, Hao Tong,  and Xiang-Shui Miao, Controlled memory and threshold switching behaviors in conductive filamentary memristor enabled by heterogeneous bilayer structure,Advanced Electronic Materials, 6(8), 2000309, 2020.DOI:10.1002/aelm.202000309.

51. Yi-Fan Qin, Rui Kuang, Xiao-Di Huang, Yi Li*, Jia Chen, and Xiang-Shui Miao,Design of High Robustness BNN Inference Accelerator Based on Binary Memristors, IEEE Transactions onElectron Devices, 67(8), 3435-3441, 2020. DOI: 10.1109/TED.2020.2998457.

50. Xiao-Di Huang, Yi Li*, Hao-Yang Li, Yi-Fan Lu, Kan-Hao Xue, and Xiang-Shui Miao, Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach, Applied Physics Letters, 116(17), 173504, 2020. DOI:10.1063/5.0006850.

49. Xiao-Di Huang, Yi Li*, Hao-Yang Li,  Kan-Hao Xue, Xingsheng Wang, and Xiang-Shui Miao, Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor, IEEE Electron Device Letters, 41(4), 549-552, 2020. DOI: 10.1109/LED.2020.2977397.

48. Jia Chen,† Wen-Qian Pan,† Yi Li*, Yu-Hui He, Rui Kuang, Yu-Ting Su, Chih-Yang Lin, Gui-Rong Feng, Nian Duan, Hao-Xuan Zheng, Cheng-Hsien Wu, Ting-Chang Chang, Simon M. Sze and Xiang-Shui Miao, High precision symmetric weight update of memristor by gate voltage ramping method for convolutional neural network accelerator, IEEE Electron Device Letters, 41(3), 353-356, 2020. DOI: 10.1109/TED.2020.2967401.

47. Long Cheng,† Hao-Xuan Zheng,†Yi Li*, Ting-Chang Chang, Simon M. Sze, Xiang-Shui Miao, Power- and area-efficient in-memory digital comparator based on multi-valued one-transistor-one-resistor memristor,IEEE Transactions on Electron Devices, 67(3), 1293-1296, 2020. DOI: 10.1109/TED.2020.2967401.

46. Wen-Qian Pan, Jia Chen, Rui Kuang,Yi Li*, Yu-Hui He, Gui-Rong Feng, Nian Duan, Ting-Chang Chang, and Xiang-Shui Miao, Strategies to Improve the Performance of Memristor-based Convolutional Neural Networks,IEEE Transactions on Electron Devices, 67(3), 895-901, 2020. DOI: 10.1109/TED.2019.2963323.

45. Wuhong Xue†, Yi Li†, Gang Liu*, Zhuorui Wang, Wen Xiao, Kemin Jiang, Zhicheng Zhong, Shuang Gao*, Jun Ding,  Xiangshui Miao, Xiao-Hong Xu*, and Run-Wei Li*, Controlled and stable quantized conductance states in the Pt/HfOx/ITO Memristor, Advanced Electronic Materials, 6(2), 1901055, 2020. DOI: 10.1002/aelm.201901055.

44. 陈佳，潘文谦，秦一凡，王峰，李灏阳，李祎*，缪向水，基于忆阻器的神经网络应用研究，微纳电子与智能制造，第1卷，第4期，24-38，2019年12月。

43. Long Cheng, Yi Li*, Kang-Sheng Yin, Si-Yu Hu, Yu-Ting Su, Miao-Miao Jin, Zhuo-Rui Wang, Ting-Chang Chang, Xiang-Shui Miao*, Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In-Memory Computing, Advanced Functional Materials, 29(49), 1905660, 2019. DOI: 10.1002/adfm.201905660.

42. Yue-Jun Zhang, Xin-Hui Chen, Zhuo-Rui Wang, Qi-Lai Chen, Gang Liu, Yi Li, and Peng-Jun Wang,* Run-Wei Li,* and Xiang-Shui Miao,* Implementation of All 27 Possible Univariate Ternary Logics with A Single ZnO Memristor, IEEE Transactions on Electron Devices, 66(11) 4710-4715, 2019. DOI: 10.1109/TED.2019.293948.

41. Nian Duan,Yi Li*, Hsiao-Cheng Chiang, Jia Chen, Wen-Qian Pan, Yu-Chieh Chien, Yu-Hui He, Kan-Hao Xue, Gang Liu, Ting-Chang Chang*, and Xiang-Shui Miao*, An Electro-Photo-Sensitive Synaptic Transistor for Edge Neuromorphic Visual System,Nanoscale, 11, 7590-17599, 2019. DOI: 10.1039/C9NR04195H. (Front cover)

40. Jia Chen,† Chih-Yang Lin,† Yi Li,* Chao Qin, Ke Lu, Jie-Ming Wang, Chun-Kuei Chen, Yu-Hui He, Ting-Chang Chang, Simon M. Sze, and Xiang-Shui Miao, LiSiOX-based Analog Memristive Synapse for Neuromorphic Computing, IEEE Electron Device Letters, 40(4), 542-545,2019.DOI: 10.1109/LED.2019.2898443. (Editors' Pick, front cover)

39. Pan Zhang, Min Xia, Fuwei Zhuge, Yue Zhou, Zhenyu Wang, Boyi Dong, Yaoyao Fu, Kecheng Yang,Yi Li, Yuhui He*, Ralph Scheicher,* Xiangshui Miao,* Nanochannel-based transport in an interfacial memristor can emulate analog weight modulation of synapses, Nano Letters, 19(7), 4279-4286,2019. doi:10.1021/acs.nanolett.9b00525.

38. Yangyang Chen,† Yue Zhou,† Fuwei Zhuge,† Bobo Tian, Mengge Yan,Yi Li, Yuhui He,* Xiangshui Miao,* Graphene-ferroelectric transistors as complementary synapses for supervised learning in spiking neural network, npj 2D Materials and Applications, 3, 31, 2019.

37. Bowei Chen, Hui Yang, Fuwei Zhuge,Yi Li,Ting-Chang Chang, Yuhui He*, Weijian Yang, Nuo Xu, Xiangshui Miao, Optimal Tuning of Memristor Conductance Variation in Spiking Neural Networks for Online Unsupervised Learning, IEEE Transactions on Electron Devices, 66(6), 2844-2849, 2019. DOI: 10.1109/TED.2019.2907541.

36. Nian Duan,Yi Li*, Hsiao-Cheng Chiang, Shin-Ping Huang, Kang-Sheng Yin, Jia Chen, Chung-I Yang, Ting-Chang Chang*, and Xiang-Shui Miao*, Gate Modulation of Excitatory and Inhibitory Bilingual Synaptic Plasticity in a Low-Temperature Polysilicon Thin Film Synaptic Transistor,ACS Applied Electronic Materials, 1(1), 132-140, 2019. DOI:10.1021/acsaelm.8b00060.

35. Si-Yu Hu,Yi Li,* Long Cheng, Zhuo-Rui Wang, Ting-Chang Chang, Simon M. Sze, and Xiang-Shui Miao,Reconfigurable Boolean Logic in Memristive Crossbar: the Principle and Implementation, IEEE Electron Device Letters, 40(2), 200-203, 2019. 10.1109/LED.2018.2886364.

34. Sungjun Kim, Jia-Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail,Yi Li, Xiangshui Miao, Yao-Feng Chang*, and Byung-Gook Park*, Neuronal Dynamics in HfOx/AlOy-based Homeothermic Synaptic Memristors with Low-Power and Homogeneous Resistive Switching, Nanoscale, 11, 237-245, 2019. DOI: 10.1039/C8NR06694A.

33. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Chih-Yang Lin, Gaobo Xu, Hui-Chun Huang, Jia Chen, Sungjun Kim,Yi Li, and Jack C. Lee, Beyond SiOx: An Active Electronics Resurgence and Biomimetic Reactive Oxygen Species Production and Regulation from Mitochondrion. Journal of Materials Chemistry C., 6, 12788-12799, 2018. doi: 10.1039/C8TC04355H.

32. Shijie Li, Boyi Dong, Biao Wang, Yi Li,Huajun Sun, Yuhui He*, Nuo Xu, Xiangshui Miao*, Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOx Memristive Synapses, IEEE Transactions on Electron Devices, 66(1), 810-813, 2018. DOI: 10.1109/TED.2018.2876065.

31. Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*, Theoretical investigation of the Ag filament morphology in conductive bridge random access memories, Journal of Applied Physics, 124, 152125, 2018.

30. Zhuo-Rui Wang, Yi Li,* Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue, Simon M. Sze, Xiang-Shui Miao, Efficient implementation of Boolean and full adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing, IEEE Transactions on Electron Devices, 65(10), 4659-4666,2018, DOI: 10.1109/TED.2018.2866048.

29. Miaomiao Jin, Long Cheng, Yi Li*, Siyu Hu, Ke Lu, Jia Chen, Nian Duan, Zhuorui Wang, Yaxiong Zhou, Ting-Chang Chang, and Xiangshui Miao, Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing. Nanotechnology, 29, 385203, 2018.

28. Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang, and Xiang-Shui Miao*, Model of dielectric breakdown in hafnia-based ferroelectric capacitors. Journal of Applied Physics, 124, 024103, 2018. (Editor’s pick)

27. Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Chen, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Boolean and sequential logic in a one-memristor-one-resistor (1M1R) structure for in-memory computing, Advanced Electronic Materials, 5, 1800229, 2018.

26. Ke Lu, Yi Li,* Wei-fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao, Diverse spike-timing dependent plasticity based on multilevel HfOx memristor for neuromorphic computing. Applied Physics A., 124, 438, 2018.

25. Qi Lin, Yi Li, Ming Xu, Qu Cheng, Hang Qian, Jinlong Feng, Hao Tong*, Xiangshui Miao*, Dual-layer Selector with Excellent Performance for Cross-Point Memory Applications, IEEE Electron Device Letters, 39(4), 496-499, 2018.

24. Nian Liu, Peng Yan, Yi Li, Ke Lu, Huajun Sun*, Hongkai Ji, Kanhao Xue, and Xiangshui Miao, Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices, Applied Physics A, 124, 143, 2018.

23. Yi Li, Yaxiong Zhou, Zhuorui Wang, Xiangshui Miao*, Memcomputing: fusion of memory and computing, SCIENCE CHINA Information Sciences, 61, 060424:1-3, 2018.

22.Yi Li*, Kangsheng Yin, Meiyun Zhang, Long Cheng, Ke Lu, Shibing Long*, Yaxiong Zhou, Zhuorui Wang, Kanhao Xue, Ming Liu, and Xiangshui Miao*, Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor, Applied Physics Letters, 111, 213505, 2017.

21. Long Cheng, Mei-Yun Zhang, Yi Li,* Ya-Xiong Zhou, Zhuo-Rui Wang, Si-Yu Hu, Shi-Bing Long,* Ming Liu and Xiang-Shui Miao, Reprogrammable logic in memristive crossbar for in-memory computing, Journal of Physics D: Applied Physics. 50, 505102, 2017.

20. Ya-Xiong Zhou†, Yi Li†, Yu-Ting Su, Zhuo-Rui Wang, Ling-Yi Shih, Ting-Chang Chang*, Kuan-Chang Chang, Shi-Bing Long, Simon M. Sze, and Xiang-Shui Miao*, Nonvolatile reconfigurable sequential logic in HfO2resistive random access memory array, Nanoscale, 9, 6649-6657, 2017. (Inside front cover)

19. Yang Zhang, Yi Li*, Xiaoping Wang*, and Eby G. Friedman, Synaptic Characteristics of Ag/AgInSbTe/Ta-Based Memristor for Pattern Recognition Applications, IEEE Transactions on Electron Devices, 64(4), 1806-1811, 2017.

18. Zhuo-Rui Wang†, Yu-Ting Su†, Yi Li†, Ya-Xiong Zhou, Tian-Jian Chu, Kuan-Chang Chang, Ting-Chang Chang*, Tsung-Ming Tsai, Simon M. Sze, and Xiang-Shui Miao*, Functionally complete Boolean logic in 1T1R resistive random access memory, IEEE Electron Device Letters, 38(2), 1-4, 2017

17. 李祎，缪向水，基于忆阻器的存储与计算融合理论与实现，国防科技，第37卷，第6期，17-22，2016年12月。

16.Yi Li, Ya-Xiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Realization of Functional Complete Stateful Boolean Logic in memristive crossbar array, ACS Applied Materials & Interfaces, 8(50), 34559-34567, 2016.

15. Yang Zhang, Xiaoping Wang*, Yi Li, and Eby G. Friedman, Memristive model for synaptic circuits, IEEE Transactions on Circuits and Systems II: Express Briefs, 64 (7), 767-771, 2016.

14. J. J. Zhang, H. Liu, H. J. Sun*, P. Yan,Y. Li, S. J. Zhong, S. Xie, R. J. Li, and X. S. Miao, Charged defects-induced resistive switching in Sb2Te3memristor, Journal of Electronic Materials, 45(2), 1154-1159 (2016).

13. Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, R. G. Xu, and X. S. Miao*, A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Physica Status Solidi A: Applications and Materials Science, 213(4), 1050-1054 (2016).

12. J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang*, Modeling the AgInSbTe memristor, Radioengineering, 24(3), 808-813 (2015).

11. P. Yan, Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun*, X. S. Miao, Conducting mechanism of forming-free TiW/Cu2O/Cu memristive devices, Applied Physics Letters, 107, 083501 (2015).

10. Y. P. Zhong, Y. Li, L. Xu, and X. S. Miao*, Simple square spikes for implementing spike-timing-dependent plasticity in phase-change memory, Physica status solidi (RRL) - Rapid Research Letters, 9(7): 414-419 (2015).

9.Y. Li, L. Xu, Y. P. Zhong, Y. X. Zhou, S. J. Zhong, Y. Z. Hu, L. O. Chua, and X. S. Miao*, Associative learning with temporal contiguity in a memristive circuit for large-scale neuromorphic networks, Advanced Electronic Materials,1, 1500125 (2015).(Front cover)

8. Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, H. J. Sun, and X. S. Miao*, 16 Boolean logics in three steps with two anti-serially connected memristors, Applied Physics Letters, 106, 233502 (2015).

7. L. Xu, Y. Li,N. N. Yu, Y. P. Zhong, and X. S. Miao*, Local order origin of thermal stability enhancement of amorphous Ag doping GeTe, Applied Physics Letters, 106, 031904 (2015).

6.Y. Li, Y. P. Zhong, J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems, Scientific Reports, 4, 4906 (2014).

5.Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor, Scientific Reports, 3, 1619 (2013).

4.Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Applied Physics Letters, 103, 043501 (2013).

3.Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory, Journal ofApplied Physics, 114, 234503 (2013).

2. J. J. Zhang, H. J. Sun*, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning, Applied Physics Letters, 102, 183513 (2013).

1. X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong, Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory, Solid-State Electronics, 67, 1 (2012).

部分会议论文(按年份倒序)：

11.Jiancong Li, Houji Zhou, Yi Li,* Xiangshui Miao, Self-Adaptive Matrix Equation Solving in Analog Memory Array, The 5th Electron Devices Technology and Manufacturing Conference(EDTM 2021), April 8-11, 2021, Chengdu, China. (Poster)

10. Zhizheng Zhang,Yi Li,*Ling Yang, Jiancong Li, Xiangshui Miao, In-Memory Hamming Distance Calculation Based on One-Transistor-Two-Memristor (1T2M) Structure,The 5thElectron Devices Technology and Manufacturing Conference (EDTM 2021), April 8-11, 2021, Chengdu, China. (Poster)

9. Xiaodi Huang, Ling Yang,Yi Li,* Xiangshui Miao, Memristive Combinational and Sequential Logic for In-Memory Computing,The 5thElectron Devices Technology and Manufacturing Conference (EDTM 2021), April 8-11, 2021, Chengdu, China. (Poster)

8.Han Bao, Xiao-Di Huang, Jia Chen,Yi Li,* and Xiang-Shui Miao, Analysis of Memristive Quantized Convolutional Neural Network Accelerator with Device Nonideality, IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2020), Nov. 23-25, 2020, Nanjing, China. (Poster)

7. Jia Chen, Wen-Qian Pan,Yi Li,* Ting-Chang Chang, and Xiang-Shui Miao,* Design for Enhancing the Performance of Memristive Convolutional Neural Network, IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2020), Nov. 23-25, 2020, Nanjing, China. (Poster)

6. Jiarui Xu, Yi Zhan, Zihao Wang, Guoyi Yu,Yi Li, and Chao Wang,* A novel variation-aware error monitoring scheme for memristor-based material implication logic,IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2020), Nov. 23-25, 2020, Nanjing, China. (Poster)

5. Yue Zhou, Nuo Xu, Bin Gao, Yangyang Chen, Boyi Dong,Yi Li, Yuhui He*, and Xiangshui Miao*, Complementary Graphene-Ferroelectric Transistors as Synapses with Modulatable Plasticity for Supervised Learning, 2019 International Electron Devices Meeting (IEDM), San Francisco, CA, December 7-11, 2019. Session Number: 6.5.

4. Xiaodi Huang,Yi Li*, Haoyang Li, and Xiangshui Miao, Low-power, high-speed and highly uniform resistive switching in bilayer Al2O3-based memristor, IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2019), Nov. 13-15, 2019, Chengdu, China.

3. Nian Duan,Yi Li, Xiangshui Miao, Hsiao-Cheng Chiang, and Ting-Chang Chang, Low Temperature Polycrystalline Silicon Thin Film Synaptic Transistor with Bilingual Plasticity for Neuromorphic Computing, IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018), Nov. 21-23, Beijing, China. (Best paper nomination)

2. Z. R. Wang,Y. Li*, Y. T. Su, Y. X. Zhou, K. S. Yin, L. Cheng, T. C. Chang*, K. H. Xue, S. M. Sze, and X. S. Miao*, Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing,The 10th IEEE International Memory Workshop (IMW 2018), May 13-16, 2018, Kyoto, Japan.

1. Jia-Chen, Sungjun Kim, Ying-Chen Chen, Min-Hwi Kim,Yi Li*, Xiang-Shui Miao, Yao-Feng Chang*, Byung-Gook Park*, and Jack C. Lee*, Synaptic properties considering temperature effect in HfOx-based memristor: demonstration of homo-thermal synaptic behaviors, The 2018 International Symposium on VLSI Technology, Systems and Applications (2018 VLSI-TSA), April 16-19, 2018, Hsinchu, Taiwan.

Dr. Yi LI,Associate Professor

Wuhan Natioanl Laboratory for Optoelectronics

School of Optical and Electronic Information

Huazhong University of Science and Technology

430074, Wuhan, P.R. China.

Email: [email protected]; [email protected]

Academic Areas: Memristor, resistive random access memory (RRAM). Develop novel electronic devices for neuromorphic computing and in-memory computing, such as artificial neurons and synapses, nonvolatile logic devices for beyond von Neumann computing.

Academic Degrees

PhD in Microelectronics and Solid State Electronics, 2014, Huazhong University of Science and Technology;

BA in Electronic Science and Technology, 2009, Huazhong University of Science and Technology.

Professional Experience

Huazhong University of Science & Technology, School of Optical and Electronic information, Lecturer, Associate Professor (2015.03-present);

National Sun Yat-sen University, Taiwan, Department of Physics, Visiting scholar, (2016.04-2016.08);

Huazhong University of Science & Technology, School of Optical and Electronic information, Research assistant (2014-2015.02)