毕设顺便攒的英文表达

表达式

• w tilde
• hat y
• x dagger

行文

• w.r.t = with regard to = about
• peculiar aspects
• not easily extendable to other devices
• corpuscular 微小的 重音2
• The following paragraphs will deal with those issues in detail.
• simplified and tractable model of the actual device
• a top view of the device 俯视图
• The contacts extend over areas of few thousand um2. 接触的面积
• The separation between S and D is a few um. 距离
• There's no significant variation of physical quantity along the direction perpendicular to the x-y plane.
• spatial inhomogenities along the z direction
• The barrier is reduced when a positive bias is applied to the semiconductor and it is increased for the opposite polarity.
• The sum is over the mesh points / super-particles.
• reproduce the physical reality
• accuracy of the results VS the cost effectiveness of the algorithm
• by varing the gate and drain bias 改变电压 vary the bias
• By collecting the above results, we have ... 整理上面的公式可以得到
• This section surveys the history of instruction set architectures (ISAs) over time.
• one can readily argue that
• the research on xxx was shrunk. 研究变少
• Rapid progress in xxx was promptly followed by xxxx.
• Raison d'etre 存在的理由
• The Ge- and Si-based technologies were spawned in 1947 by the demonstration of the first transistor. 雨后春笋般出现

几个容易忘记的点

金属半导体接触

• 外加电压是调整半导体一侧的电压降，金属一侧认为没有电压降
• 真空能级连续，但是不是constant，电子亲和能是不变的，所以真空能级也相应弯曲。
• J = Js * [exp(qv/nkT) - 1] 低掺杂时，Js是常量，n接近1；掺杂浓度提高，I-V曲线就越发不像pn结了。

• 电流类型四种

  
  
  

MESFET

• GaAs不做MOSFET，因为表面态太大了。Si不怎么做MESFET，因为允许加的电势太小？？
• unipolar device
• 一种 JFET（另一种是PNJFET）
• epitaxial layer of GaAs 掺杂浓度一般为 10^17 cm-3，长在semi-insulating GaAs substrate上。

GaAs

• Drift velocity VS field curve presents a maximum at fields around 3 kV/cm at room temperature.